jiangsu changjiang electronics technology co., lt d sop8 plastic-encapsulate mosfets CJQ4828 dual n-channel mosfet description the CJQ4828 uses advanced trench te chnolog y to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in pwm applications. maximum ra tings (t a =25 unless otherwise noted) parameter symbol value units drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current (t 10s ) (note 1) i d 4.5 a pulsed drain current (note 2) i dm 20 a power dissip ation p d 1.25 w thermal resistance from junction to ambien t (t 10s ) (note 1) r ja 100 /w avalanche curr ent (note 2) i ar, i as 19 a repetitive avalenche ener gy 0.1mh (note 2) e ar, e as 18 mj junction temperature t j 150 storage temperature t stg -55~ 150 sop8 v (br)dss r ds(on) max i d 60 v 56 m @ 10 v ? 4.5 a ? 77 m 4.5 v ? @ marking: equivalent circuit www.cj-elec.com 1 e , ma r ,201 6 solid dot = green molding compound device, if none,the normal device. q4828 = device code yy =date code solid dot = pin1 indicator
parameter symbol tes t condition min typ max unit static pa rameters drain-source br eakdown voltage v (br)dss v gs = 0v, i d =250a 60 v zero gate voltage drai n current i dss v ds =60v,v gs = 0v 1 a gate-body leakage current i gss v gs =20v, v ds = 0v 100 na gate threshold voltage (note 3) v gs(th) v ds =v gs , i d =250a 1 2.1 3 v v gs =10v, i d =4.5a 40 56 m ? drain-source on -resistance (note 3) r ds(on) v gs =4.5v, i d =3a 55 77 m ? forwar d tranconductance (note 3) g fs v ds =5v, i d =4.5a 6 s diode forwar d voltage (note 3) v sd i s =1a, v gs = 0v 1 v dynamic p arameters (note 4) input capacitance c iss 540 pf output capacitance c oss 60 pf reverse transfer capacitanc e c rss v ds =30v,v gs =0v,f =1mhz 25 pf switching parameters (note 4) turn-on delay t ime t d(on) 4.7 ns turn-on rise time t r 2.3 ns turn-off delay ti me t d(off) 15.7 ns turn-off fall time t f v gs =10v,v ds =30v, r l =6.7 ? ,r gen =3 ? 1.9 ns total gate charge (10v) 10.5 nc total gate charge (4.5v) q g 5.5 nc gate-source charge q gs 1.6 nc gate-drain charge q gd v ds =30v,v gs =10v,i d =4.5a 2.2 nc notes : 1. the value in any given a pplication depends on the user?s specific board design. 2. repetitive rating : pulse width limited by junction temperature. 3. pulse test : pulse width 300s, duty cycle 0.5%. 4. these parameters have no way to verify. 0 2 6 ) ( 7 ( / ( & |